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December This process, which uses feature sizes approaching. They were designed for use in appli-. These transistors can be operated.

NOTE: When ordering use the entire part number. Formerly developmental type TA Drain Source Voltage. V DSS. Drain Gate Voltage. V DGR. Gate Source Voltage. Drain Current. RMS Continuous. Pulsed Drain Current. Single Pulse Avalanche Rating. Power Dissipation. Operating and Storage Temperature. Refer to Peak Current Curve. Refer to UIS Curve. Users should follow proper ESD handling procedures. File Number Drain-Source Breakdown Voltage. Gate Threshold Voltage.

Zero Gate Voltage Drain Current. Gate-Source Leakage Current. On Resistance. Turn-On Time. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Turn-Off Time. Total Gate Charge. Gate Charge at 10V. Threshold Gate Charge. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Thermal Resistance Junction to Case.

Thermal Resistance Junction to Ambient. BV DSS. V GS TH. I DSS. I GSS. Q G TOT. C ISS. C OSS. C RSS. Forward Voltage. Reverse Recovery Time. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in appli- cations such as switching regulators, switching converters, motor drivers and relay drivers.

These transistors can be operated directly from integrated circuits. I D Pulsed Drain Current.


RFP70N06 MOSFET. Datasheet pdf. Equivalent

Data Sheet. July File Number This process, which uses feature. They were designed for use in applications such as. These transistors can be operated directly from. Formerly developmental type TA Ordering Information.

78L05 SOT 89 PDF

RFP70N06: N-Channel Power MOSFET 60V, 70A, 14mΩ


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